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S2M0120120J
Part number：
S2M0120120J
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SMC Diode Solutions
describe：
MOSFET SILICON CARBIDE SIC 1200V
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1927
minimum : 1
quantity
unit price
price
1
8.41
8.41
10
5.74
57.4
100
4.22
422
500
3.66
1830
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    150mOhm @ 13.3A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs
    29.6 nC @ 20 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    652 pF @ 1000 V
  • Power Dissipation (Max)
    153W (Tc)
  • FET Feature
    -
  • 528563779
  • 0755-83225727
  • Xiaolong zhuang
  • Dragzhuang
  • Xiaolongzhuangzhuang
  • drag zhuang
  • 91788790e932bf18

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