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S2M0080120K
Part number：
S2M0080120K
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SMC Diode Solutions
describe：
MOSFET SILICON CARBIDE SIC 1200V
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1860
minimum : 1
quantity
unit price
price
1
16.2
16.2
30
9.99
299.7
120
8.63
1035.6
510
8.62
4396.2
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs
    54 nC @ 20 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1324 pF @ 1000 V
  • Power Dissipation (Max)
    231W (Tc)
  • FET Feature
    -
  • 528563779
  • 0755-83225727
  • Xiaolong zhuang
  • Dragzhuang
  • Xiaolongzhuangzhuang
  • drag zhuang
  • 91788790e932bf18

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