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S2M0025120K
Part number：
S2M0025120K
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SMC Diode Solutions
describe：
MOSFET SILICON CARBIDE SIC 1200V
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1870
minimum : 1
quantity
unit price
price
1
42.91
42.91
30
29.52
885.6
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    34mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs
    130 nC @ 20 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    4402 pF @ 1000 V
  • Power Dissipation (Max)
    446W (Tc)
  • FET Feature
    -
  • 528563779
  • 0755-83225727
  • Xiaolong zhuang
  • Dragzhuang
  • Xiaolongzhuangzhuang
  • drag zhuang
  • 91788790e932bf18

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