TK125A60Z1,S4X
Part Number:
TK125A60Z1,S4X
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Toshiba Semiconductor and Storage
Description:
N-CH MOSFET, 600 V, 0.125 @10V,
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Power Dissipation (Max) 40W (Tc)
- Operating Temperature 150°C
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-220-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 20A (Ta)
- Supplier Device Package TO-220SIS
- Rds On (Max) @ Id, Vgs 125mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id 4V @ 730µA
- Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 300 V