IMZA120R053M2HXKSA1

IMZA120R053M2HXKSA1

Part Number: IMZA120R053M2HXKSA1
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: IMZA120R053M2HXKSA1
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Current - Continuous Drain (Id) @ 25°C 38A (Tc)
  • Drain to Source Voltage (Vdss) 1200 V
  • Package / Case TO-247-4
  • Technology SiCFET (Silicon Carbide)
  • Power Dissipation (Max) 182W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Vgs (Max) +23V, -7V
  • Supplier Device Package PG-TO247-4-8
  • Vgs(th) (Max) @ Id 5.1V @ 4.1mA
  • Gate Charge (Qg) (Max) @ Vgs 30 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 800 V
  • Rds On (Max) @ Id, Vgs 69mOhm @ 13A, 18V